NTF3055L108T1G datasheet

http://www.datasheet-photos.com/images/1pcsB.jpgIf you want to buy this product please visit:http://www.datasheet-photos.com/Prod...55L108T1G.htmlPopular search:NTF3055L108T1G datasheetNTF3055L108T1G pdfNTF3055L108T1G equivalentNTF3055L108T1G buyNTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic Level, N−ChannelSOTâˆ?23Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.Featuresâ€?Pb−Free Packages are AvailableApplicationsâ€?Power Suppliesâ€?Convertersâ€?Power Motor Controlsâ€?Bridge CircuitsMAXIMUM RATINGS (TC = 25°C unless otherwise noted)3.0 A, 60 V RDS(on) = 120 m N−ChannelSOTâˆ?23CASE 318E1 2 STYLE 3MARKING DIAGRAM3055L = Device CodeA = Assembly LocationY = YearW = Work Week = Pb−Free Package(Note: Microdot may be in either location)PIN ASSIGNMENT4 DrainMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1. When surface mounted to an FR4 board using 1â€?pad size, 1 oz. (Cu. Area 0.0995 in2).2. When surface mounted to an FR4 board using minimum recommended pad size, 2âˆ?.4 oz. (Cu. Area 0.272 in2).Gate Drain SourceORDERING INFORMATIONSee detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.Preferred devices are recommended choices for future use and best overall value.© Semiconductor Components Industries, LLC, 2005 1December, 2005 âˆ?Rev. 4Publication Order Number:NTF3055L108/DELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)CharacteristicSymbolOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc)Temperature Coefficient (Positive)V(BR)DSSZero Gate Voltage Drain Current(VDS = 60 Vdc, VGS = 0 Vdc)(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)ON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc)Threshold Temperature Coefficient (Negative)VGS(th)Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 1.5 Adc)RDS(on)Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 3.0 Adc)(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)VDS(on)Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc)DYNAMIC CHARACTERISTICSInput Capacitance(VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz)Output CapacitanceTransfer CapacitanceSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time(VDD = 30 Vdc, ID = 3.0 Adc, VGS = 5.0 Vdc,RG = 9.1 ) (Note 3)td(on)Rise TimeTurn−Off Delay Timetd(off)Fall TimeGate Charge(VDS = 48 Vdc, ID = 3.0 Adc, VGS = 5.0 Vdc) (Note 3)SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage(IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150°C) (Note 3)Reverse Recovery Time(IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ s) (Note 3)Reverse Recovery Stored Charge3. Pulse Test: Pulse Width â‰?300 s, Duty Cycle â‰?2.0%.4. Switching characteristics are independent of operating junction temperatures.5 VGS = 3.5 V VGS = 4.5 VVGS = 3.4 VVGS = 3.2 VVDS > = 10 V3 VGS = 6 V= 3 V 3TJ = 100°C2 VGS = 10 V= 2.8 VTJ = 25°C0 0.5 1VGS = 2.5 V2 2.5 3TJ = âˆ?5°C2 2.5 3 3.5 4VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)Figure 1. On−Region Characteristics Figure 2. Transfer CharacteristicsVGS = 5 VTJ = 100°CVGS = 10 VTJ = 100°CTJ = 25°C TJ = âˆ?5°CTJ = 25°C TJ = âˆ?5°C5 6 0 12 3 4 5 6ID, DRAIN CURRENT (AMPS)Figure 3. On−Resistance vs. Gate−to−SourceVoltageID, DRAIN CURRENT (AMPS)Figure 4. On−Resistance vs. Drain Current andGate VoltageVGS, GATE−TO−SOURCE VOLTAGE (VOLTS)ID = 1.5 A VGS = 5 VVGS = 0 VTJ = 150°CTJ = 100°C10 20 3040 50 60TJ, JUNCTION TEMPERATURE (°C)Figure 5. On−Resistance Variation withTemperatureVDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 6. Drain−to−Source Leakage Current vs. VoltageVDS = 0 V CissVGS = 0 VTJ = 25°C10 5 VGS0 VDS 5TJ = 25°CGATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)Qg, TOTAL GATE CHARGE (nC)Figure 7. Capacitance Variation Figure 8. Gate−to−Source andDrain−to−Source Voltage vs. Total ChargeVDS = 30 V ID = 3 A VGS = 5 Vtd(off)VGS = 0 V TJ = 25°C1 10 100 0.540.74 0.78RG, GATE RESISTANCE ( )Figure 9. Resistive Switching Time Variation vs. Gate ResistanceVSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)Figure 10. Diode Forward Voltage vs. CurrentVGS = 15 V SINGLE PULSE TC = 25°CID = 7 A RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT100 s10 10075 100125 150VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 11. Maximum Rated Forward BiasedSafe Operating AreaTJ, STARTING JUNCTION TEMPERATURE (°C)Figure 12. Maximum Avalanche Energy vs.Starting Junction Temperature1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)1 D = 0.5Single Pulse0.000010.1 1 t, TIME (s)Figure 13. Thermal ResponseORDERING INFORMATIONPackageShippingâ€?NTF3055L108T1S OTâˆ?23 (TOâˆ?61)1000 / Tape & ReelNTF3055L108T1GSOTâˆ?23 (TOâˆ?61) (Pb−Free)1000 / Tape & ReelNTF3055L108T3SOTâˆ?23 (TOâˆ?61)4000 / Tape & ReelNTF3055L108T3GSOTâˆ?23 (TOâˆ?61) (Pb−Free)4000 / Tape & ReelNTF3055L108T3LFSOTâˆ?23 (TOâˆ?61)4000 / Tape & ReelNTF3055L108T3LFGSOTâˆ?23 (TOâˆ?61) (Pb−Free)4000 / Tape & Reelâ€For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.PACKAGE DIMENSIONSSOTâˆ?23 (TOâˆ?61)CASE 318Eâˆ?4ISSUE K1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.MILLIMETERSMIN MAX MIN MAX0.249 0.263 6.30 6.70B 0.130 0.145 3.30 3.70C 0.060 0.068 1.50 1.75D 0.024 0.035 0.60 0.89F 0.115 0.126 2.90 3.20G 0.087 0.094 2.20 2.40H 0.0008 0.0040 0.020 0.100J 0.009 0.014 0.24 0.35K 0.060 0.078 1.50 2.00G L 0.033 J M 0 10 0 10S 0.264 0.287 6.70 7.300.08 (0003)STYLE 3:M PIN 1. GATEK 2. DRAIN3. SOURCE4. DRAINSOLDERING FOOTPRINT*SOTâˆ?23SCALE 6:1*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONLITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 61312, Phoenix, Arizona 85082âˆ?312 USAPhone: 480âˆ?29âˆ?710 or 800âˆ?44âˆ?860 Toll Free USA/Canada Fax: 480âˆ?29âˆ?709 or 800âˆ?44âˆ?867 Toll Free USA/Canada Email: N. American Technical Support: 800âˆ?82âˆ?855 Toll FreeUSA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2âˆ?âˆ? Kamimeguro, Meguro−ku, Tokyo, Japan 153âˆ?051Phone: 81âˆ?âˆ?773âˆ?850ON Semiconductor Website: Order Literature: For additional information, please contact yourlocal Sales Representative.NTF3055L108/D