BSP297 datasheet

http://photos.utsource.net/gif/utsource1.gifproduct details:http://www.utsource.net/BSP297.htmlIf you want to buy this product please visit:http://www.utsource.net/ic-datasheet/BSP297-204083.htmlPopular search:BSP297 datasheetBSP297 pdfBSP297 buyBSP297 equivalentSIPMOS ® Small-Signal Transistor�N channel�Enhancement mode�Logic Level�VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 297 200 V 0.65 A 2 SOT-223 BSP 297Type Ordering Code Tape and Reel InformationBSP 297 Q67000-S068 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 200 VDrain-gate voltageRGS = 20 kGate source voltage VGS 14Gate-source peak voltage,aperiodic Vgs 20Continuous drain currentTA = 25 °CDC drain current, pulsedTA = 25 °CPower dissipationTA = 25 °CID IDpuls PtotMaximum RatingsParameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150Thermal resistance, chip to ambient air RthJA 70 K/W Therminal resistance, junction-soldering point 1) RthJS 10DIN humidity category, DIN 40 040 EIEC climatic category, DIN IEC 68-1 55 / 150 / 561) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connectionElectrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter Symbol Values Unit min. typ. max.Static CharacteristicsDrain- source breakdown voltageVGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltageVGS=VDS, ID = 1 mAZero gate voltage drain currentV(BR)DSSVGS(th)200 - -0.8 1.4 2VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C Gate-source leakage currentVGS = 20 V, VDS = 0 VDrain-Source on-state resistanceRDS(on)- 10 100VGS = 10 V, ID = 0.65 AVGS = 4.5 V, ID = 0.65 AElectrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter Symbol Values Unit min. typ. max.Dynamic CharacteristicsTransconductanceVDS 2 * ID * RDS(on)max, ID = 0.65 A Input capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzOutput capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzReverse transfer capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzTurn-on delay timeVDD = 30 V, VGS = 10 V, ID = 0.29 ARGS = 50Rise timeVDD = 30 V, VGS = 10 V, ID = 0.29 ARGS = 50Turn-off delay timeVDD = 30 V, VGS = 10 V, ID = 0.29 ARGS = 50Fall timeVDD = 30 V, VGS = 10 V, ID = 0.29 ARGS = 50gfs Ciss Coss Crss td(on)tr td(off) tf0.5 1.15 -- 300 400- 40 60- 20 30- 15 25- 120 160- 50 70Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter Symbol Values Unit min. typ. max.Reverse DiodeInverse diode continuous forward currentTA = 25 °CInverse diode direct current,pulsedTA = 25 °CInverse diode forward voltageVGS = 0 V, IF = 1.3 A, Tj = 25 °CIS ISM VSD- - 0.65- - 2.6- 0.9 1.1Power dissipationPtot = (TA)Drain currentID = (TA)parameter: VGS 10 V0 20 40 60 80 100 120 °C 1600 20 40 60 80 100 120 °C 160Safe operating area ID=f(VDS)parameter : D = 0, TC=25°CTransient thermal impedanceZth JA = (tp)parameter: D = tp / TD = 0.500.02 single pulse10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0Typ. output characteristicsID = VDS)parameter: tp = 80 µsTyp. drain-source on-resistanceRDS (on) = ID)parameter: tp = 80 µs, Tj = 25 °CPtot = 2Wlkh e d cVGS [V]a 2.0 b 2.5 c 3.0 d 3.5 e 4.0b f 4.5 g 5.0h 6.0 i 7.0 j 8.0k 9.0DS (on)2.0 e da l 10.0VGS [V] =i j l gh f9.0 10.00.0 1.0 2.0 3.0 4.0 5.0 V 7.00.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9Typ. transfer characteristics ID = f(VGS)parameter: tp = 80 µsTyp. forward transconductance gfs = f (ID)parameter: tp = 80 µs,0 1 2 3 4 5 6 7 8 V 100.0 0.4 0.8 1.2 1.6 A 2.2Drain-source on-resistanceRDS (on) = (Tj)parameter: ID = 0.65 A, VGS = 10 VGate threshold voltageVGS (th) = (Tj)parameter: VGS = VDS, ID = 1 mADS (on)-60 -20 20 60 100 °C 160-60 -20 20 60 100 °C 160Typ. capacitancesC = f (VDS)parameter:VGS=0V, f = 1 MHzForward characteristics of reverse diodeIF = (VSD)parameter: Tj, tp = 80 µsTj = 25 °C typTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)0 5 10 15 20 25 30 V 400.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0Drain-source breakdown voltageV(BR)DSS = (Tj)Safe operating area ID=f(VDS)parameter : D = 0.01, TC=25°C(BR)DSS-60 -20 20 60 100 °C 160Package outlinesSOT-223Dimensions in mm