If you want to buy this product please visit:http://www.datasheet-photos.com/Product/2N6517.htmlPopular search:2N6517 datasheet2N6517 transistor2N6517 pdf2N6517 equivalentNPN SILICON PLANARMEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94 FEATURES* 350 Volt VCEO* Gain of 15 at IC=100mAABSOLUTE MAXIMUM RATINGS.TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Base Current IB 250 mA Continuous Collector Current IC 500 mA Power Dissipation at Tamb = 25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown VoltageCollector-EmitterBreakdown VoltageEmitter-Base BreakdownVoltageV(BR)CBO 350 V IC=100 A, IE=0V(BR)CEO 350 V IC=1mA, IB=0* V(BR)EBO 5 V IE=10 A, IC=0 Collector Cut-Off Current ICBO 50 nA VCB=250V, IE=0Emitter Cut-Off Current IEBO 50 nA VEB=5V, IC=0 Collector-EmitterSaturation VoltageBase-Emitter Saturation VoltageVCE(sat) 0.3 V0.35 VVBE(sat) 0.80 V0.85 V0.90 VIC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=50mA, IB=5mA*IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* Base-Emitter Turn-OnVoltageVBE(on) 2.0 V IC=100mA, VCE=10V* Static Forward CurrentTransfer RatiohFE 20IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* Transition Frequency fT 40 MHz IC=10mA, VCE=20V, f=20MHz*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%