BUJ100 datasheet

http://www.datasheet-photos.com/images/1pcsB.jpgIf you want to buy this product please visit:http://www.datasheet-photos.com/Product/BUJ100.htmlPopular search:BUJ100 datasheetBUJ100 pdfBUJ100 dataBUJ100 circuitSilicon Diffused Power Transistor BUJ100GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.QUICK REFERENCE DATAPARAMETERCONDITIONSVCESM VCBO VCEO ICICM Ptot VCEsat hFECollector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC)Collector current peak valueTotal power dissipationCollector-emitter saturation voltageFall time (Inductive)VBE = 0 VTlead 25 ËšCIC = 0.75 A;IB = 150mAIC = 0.75 A;VCE = 5 VIC = 1.0 A;IBON = 200mAV V V A A W VPINNING - TO92 PIN CONFIGURATION SYMBOLPIN DESCRIPTION c1 Emitter2 Collector bLIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)PARAMETERCONDITIONSVCESM VCEO VCBO ICICM IB IBM Ptot Tstg TjCollector to emitter voltageCollector to emitter voltage (open base)Collector to base voltage (open emitter) Collector current (DC)Collector current peak valueBase current (DC)Base current peak valueTotal power dissipationStorage temperatureJunction temperatureVBE = 0 VTlead 25 ËšCV V V A A A A WTHERMAL RESISTANCESPARAMETERCONDITIONSRth j-leadThermal resistance junction to leadRth j-aThermal resistanceJunction to ambientpcb mounted; lead length = 4mmSilicon Diffused Power Transistor BUJ100STATIC CHARACTERISTICSTlead = 25 ËšC unless otherwise specifiedPARAMETERCONDITIONSICES,ICBOICEO IEBO VCEOsusthFE hFE hFECollector cut-off currentCollector cut-off currentEmitter cut-off currentCollector-emitter sustaining voltageCollector-emitter saturation voltageBase-emitter saturation voltageDC current gainVBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ËšCVCEO = VCEOMmax(400V) VEB = 9 V; IC = 0 AIB = 0 A; IC = 10mA; L = 25 mHIC = 0.75 A;IB = 0.15 A IC = 0.75 A; IB =0.15 AIC = 10mA; VCE = 5 VIC = 100mA; VCE = 5 VIC = 0.75 A; VCE = 5 VDYNAMIC CHARACTERISTICSTlead = 25 ËšC unless otherwise specifiedPARAMETERCONDITIONSSwitching times (resistive load)Turn-on timeTurn-off storage timeTurn-off fall timeICon = 1.0 A; IBon = -IBoff = 200mA; RL = 75 ohms; VBB2 = 4 V;Switching times (inductive load)Turn-off storage timeTurn-off fall timeICon = 1.0 A; IBon = 200mA; LB = 1 H;-VBB = 5 VSwitching times (inductive load)Turn-off storage timeTurn-off fall timeICon = 1.0 A; IBon = 200mA; LB = 1 H;-VBB = 5 V; Tj = 100 ËšC1 Measured with half sine-wave voltage (curve tracer).Silicon Diffused Power Transistor BUJ10030-60 Hz100-200RHorizontalOscilloscopeVerticalZth / (K/W)1u 10u100u 1m10m 100m 110 100Fig.1. Test circuit for VCEOsust.Fig.4. Transient thermal impedance.Zth j-lead = f(t); parameter D = tp/TIC / mA10 25 CVCE = 1VVCE / V minVCEOsustFig.2. Oscilloscope display for VCEOsust.0.001 0.01 0.1 1 2 3 5Fig.5. Typical DC current gain. hFE = f(IC)parameter VCEPD% Normalised Power Derating0 20 40 60 80 100 120 140VCE = 5VTmb / CFig.3. Normalised power dissipation.PD% = 100 PD/PD 25ËšC = f (Tmb)0.001 0.01 0.1 1 2 3 5Fig.6. Typical DC current gain. hFE = f(IC)parameter VCESilicon Diffused Power Transistor BUJ100VCEsat VOLTAGE/VVBEsat VOLTAGE/VIC/IB = 31 IC/IB = 30.01 0.1 1 2IC, COLLECTOR CURRENT/A0.01 0.1 1 2IC, COLLECTOR CURRENT/AFig.7. Collector-Emitter saturation voltage. Fig.8. Base-Emitter saturation voltage.Solid Lines = typ values, IC/IB = 3 Solid Lines = typ values, IC/IB = 3INDUCTIVE SWITCHINGLC IBon LBFig.9. Test circuit inductive load.VCC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H90 % ICts tf t toffIB IBonFig.10. Switching times waveforms with inductive load.tfi (ns)225 IC = 2A175 IC = 1.5A75 IC = 1A2 4 6 8 10 11HFE GAIN (IC/IB)Fig.11. Inductive switching. tfi = f(hFE)tfi (ns)225 IC/IB = 10100 IC/IB =325 IC/IB = 50.8 1 1.2 1.4 1.6 1.8 2 2.2IC COLLECTOR CURRENT /AFig.12. Inductive switching. tfi = f(IC)Silicon Diffused Power Transistor BUJ100tsi (us)tsi (us)1 IC = 2A 1IC = 1.5AIC/IB = 3IC/IB = 5IC = 1AIC/IB = 102 4 6 8 10 11HFE GAIN (IC/IB)0.8 1 1.2 1.4 1.6 1.8 2 2.2IC COLLECTOR CURRENT /AFig.13. Inductive switching. Fig.14. Inductive switching. tsi = f(hFE) tsi = f(IC)RESISTIVE SWITCHINGRL VIM RB0 T.U.T.Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01.RB and RL calculated from ICon and IBon requirements.90 % ICon 90 %ton tf tofftr 30nsFig.16. Switching times waveforms with resistive load.ton (us)IC/IB = 101 IC/IB = 5IC/IB = 30 0.5 1 1.5 2IC COLLECTOR CURRENT (A)Fig.17. Resistive switching. ton = f(IC)ts (us)IC/IB = 5IC/IB = 30.5 IC/IB = 100 0.5 1 1.5 2 2.5IC COLLECTOR CURRENT (A)Fig.18. Resistive switching. ts = f(IC)Silicon Diffused Power Transistor BUJ100tf (ns)IC/IB = 5IC/IB = 3IC/IB = 100 0.5 1 1.5 2IC COLLECTOR CURRENT (A)Fig.19. Resistive switching. tf = f(IC)IBon LBVCL(RBSOAR)PROBE POINT0 100 200 300 400 500 600 700 800VCEclamp/VFig.20. Test Circuit for the RBSOA test.Vcl 700V; Vcc = 150V; LB = 1 H; Lc = 200 HFig.21. Reverse bias safe operating area Tj Tjmaxfor -VBE = 9V, 5V,3V & 1VSilicon Diffused Power Transistor BUJ100MECHANICAL DATAPlastic single-ended leaded (through hole) package; 3 leads SOT540 2.5 5 mmDIMENSIONS (mm are the original dimensions)1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.OUTLINE VERSIONREFERENCESEUROPEAN PROJECTIONISSUE DATE97-02-28Fig.22. TO92 ; plastic envelope; Net Mass: 0.2 g1. Epoxy meets UL94 V0 at 1/8".Silicon Diffused Power Transistor BUJ100DEFINITIONSData sheet statusObjective specificationThis data sheet contains target or goal specifications for product development.Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.Product specificationThis data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.